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| DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors FEATURES * Low leakage level (typ. 500 fA) * High gain * Low cut-off voltage. BF556A; BF556B; BF556C handbook, halfpage 2 1 g d s APPLICATIONS * Impedance converters in e.g. electret microphones and infra-red detectors * VHF amplifiers in oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate` DESCRIPTION source CAUTION 3 Top view MAM036 Marking codes: BF556A: M84. BF556B: M85. BF556C: M86. Fig.1 Simplified outline and symbol. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage (DC) gate-source cut-off voltage drain current BF556A BF556B BF556C Ptot yfs total power dissipation forward transfer admittance up to Tamb = 25 C VGS = 0; VDS = 15 V ID = 200 A; VDS = 15 V VGS = 0; VDS = 15 V 3 6 11 - 4.5 7 13 18 250 - mA mA mA mW mS CONDITIONS - -0.5 MIN. MAX. 30 -7.5 UNIT V V 1996 Jul 29 2 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj Note PARAMETER drain-source voltage (DC) gate-source voltage gate-drain voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 25 C; note 1 open drain open source CONDITIONS BF556A; BF556B; BF556C MIN. - - - - - -65 - MAX. 30 -30 -30 10 250 150 150 V V V UNIT mA mW C C 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff IDSS PARAMETER gate-source cut-off voltage drain current BF556A BF556B BF556C IGSS yfs yos gate leakage current forward transfer admittance common source output admittance VGS = -20 V; VDS = 0 VGS = 0; VDS = 15 V VGS = 0; VDS = 15 V CONDITIONS ID = 200 A; VDS = 15 V VGS = 0; VDS = 15 V 3 6 11 - 4.5 - - - - -0.5 - 40 7 13 18 -5000 - - mA mA mA pA mS S MIN. -30 -0.5 - TYP. - -7.5 MAX. V V UNIT gate-source breakdown voltage IG = -1 A; VDS = 0 PARAMETER thermal resistance from junction to ambient; note 1 VALUE 500 UNIT K/W 1996 Jul 29 3 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors DYNAMIC CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL Cis Crs gis gfs grs gos Vn PARAMETER input capacitance reverse transfer capacitance common source input conductance common source transfer conductance common source reverse conductance common source output conductance equivalent input noise voltage BF556A; BF556B; BF556C CONDITIONS VDS = 15 V; VGS = -10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 15 V; VGS = -10 V; f = 1 MHz VDS = 15 V; VGS = 0; f = 1 MHz VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz VDS = 10 V; ID = 1 mA; f = 100 MHz VDS = 10 V; ID = 1 mA; f = 450 MHz VDS = 10 V; ID = 1 mA; f = 100 Hz 3 TYP. 1.7 0.8 0.9 15 300 2 1.8 -6 -40 30 60 40 UNIT pF pF pF pF S S mS mS S S S S nV/Hz MRC154 MRC156 handbook, 20 halfpage handbook, 10 halfpage IDSS (mA) 16 Yfs (mS) 8 12 6 8 4 4 2 0 0 1 2 3 4 5 6 VGSoff (V) 7 0 0 1 2 3 4 5 6 7 VGSoff (V) VDS = 15 V; ID = 1 A. VDS = 15 V. Fig.3 Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. Forward transfer admittance as a function of gate-source cut-off voltage; typical values. 1996 Jul 29 4 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C handbook, halfpage 100 Gos MRC153 handbook, halfpage 300 MRC155 (S) 80 RDSon () 200 60 40 100 20 0 0 -2 -4 -6 -8 VGSoff (V) 0 0 2 4 6 VGSoff (V) 8 VDS = 15 V. VDS = 100 mV; VGS = 0. Fig.4 Common-source output conductance as a function of gate-source cut-off voltage; typical values. Fig.5 Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. handbook, halfpage 5 MRC145 ID (mA) VGS = 0 V handbook, halfpage 16 MRC146 4 ID (mA) 12 VGS = 0 V -0.5 V 3 -0.5 V 8 -1.0 V -1.5 V 2 -1 V 1 4 -2.0 V -2.5 V 0 0 4 8 12 VDS (V) 16 0 0 4 8 12 VDS (V) 16 Fig.6 Typical output characteristics; BF556A. Fig.7 Typical output characteristics; BF556B. 1996 Jul 29 5 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C handbook, halfpage 25 MRC147 ID (mA) handbook, halfpage 30 MRC148 VGS = 0 V 20 -1 V ID (mA) 20 BF556C 15 -2 V 10 -3 V 5 -4 V -5 V 0 0 4 8 12 VDS (V) 16 0 -6 -4 -2 10 BF556B BF556A 0 VGS (V) VDS = 15 V. Fig.8 Typical output characteristics; BF556C. Fig.9 Typical input characteristics. 103 handbook, halfpage I D (A) 102 MRC149 -102 handbook, halfpage IG (pA) MRC151 ID = 10 mA 1 mA BF556C 10 BF556B BF556A -10 1 10-1 -1 IGSS -10-1 0.1 mA 10-2 10-3 -8 -6 -4 -2 VGS (V) 0 -10-2 0 4 8 12 16 20 VDG (V) VDS = 15 V. ID = 10 mA only for BF556B and BF556C. Fig.10 Drain current as a function of gate-source voltage; typical values. Fig.11 Gate current as a function of drain-gate voltage; typical values. 1996 Jul 29 6 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C 103 handbook, halfpage IGSS (pA) 102 MRC150 300 P tot (mW) MRC166 200 10 100 1 10-1 -50 0 50 100 Tj (C) 150 00 50 100 Tamb ( oC) 150 VDS = 0; VGS = -20 V. Fig.12 Gate current as a function of junction temperature; typical values. Fig.13 Power derating curve. MRC134 1 handbook, halfpage C rs (pF) 0.8 handbook, halfpage 3 MRC140 C is (pF) 2 0.6 0.4 1 0.2 0 -10 -8 -6 -4 -2 VGS (V) 0 0 -10 -8 -6 -4 -2 0 VGS (V) VDS = 15 V. VDS = 15 V. Fig.14 Reverse transfer capacitance; typical values. Fig.15 Input capacitance; typical values. 1996 Jul 29 7 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C 102 handbook, halfpage gis, bis (mS) 10 bis 1 MRC142 handbook, halfpage 10 MRC141 gfs, -bfs (mS) gfs 1 -bfs 10-1 gis 10-2 10 102 f (MHz) 103 10-1 10 102 f (MHz) 103 VDS = 10 V; ID = 1 mA; Tamb = 25 C. VDS = 10 V; ID = 1 mA; Tamb = 25 C. Fig.16 Common-source input admittance; typical values. Fig.17 Common-source transfer admittance; typical values. handbook, halfpage -10 MRC144 MRC143 handbook, halfpage 10 brs, grs (mS) -1 brs bos, gos (mS) bos 1 -10-1 10-1 gos grs -10-2 -10-3 10 10-2 102 f (MHz) 103 10 102 f (MHz) 103 VDS = 10 V; ID = 1 mA; Tamb = 25 C. VDS = 10 V; ID = 1 mA; Tamb = 25 C. Fig.18 Common-source reverse admittance; typical values. Fig.19 Common-source output admittance; typical values. 1996 Jul 29 8 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C 10 3 handbook, halfpage Vn (V) 10 2 MRC278 10 1 10 10 2 10 3 10 4 f (Hz) 10 5 VDS = 10 V; ID = 1 mA. Fig.20 Equivalent noise voltage as a function of frequency. 1996 Jul 29 9 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors PACKAGE OUTLINE BF556A; BF556B; BF556C handbook, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.21 SOT23. 1996 Jul 29 10 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF556A; BF556B; BF556C This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 29 11 |
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